GaAs HEMTs for Low Noise Amplifier in Automotive Application
نویسنده
چکیده
In response to the requests received since 2006 from overseas Tier 1 manufacturers (primary corporations that directly supply parts to automobile manufacturers), Mitsubishi Electric developed the MGF4941CL and the MGF4841CL discrete high electron mobility transistor (HEMT) amplifiers employing GaAs, and commenced their mass production in 2014. These amplifiers constitute the core of the circuits in the transmitting and receiving section of the 24 GHz band short-distance-detection radar sensor module designed to accurately measure the distance and relative velocity between an automobile and an object in the vicinity. This paper presents an overview of the process leading to the commercialization of these discrete HEMT amplifiers, which are intended to be mounted in automobiles.
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